Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 3, Pages 1043-1052Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2010.07.105
Keywords
Hafnium dioxide; Atomic layer deposition (ALD); Structure; Crystallization; Topography
Categories
Funding
- Estonian Science Foundation [6651, 6999, 7845]
Ask authors/readers for more resources
HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on Si(100), Si(111) and amorphous SiO2 substrates at 180-750 degrees C and the effect of deposition temperature and film thickness on the growth rate and optical properties of the film material was studied. Crystallization, texture development and surface roughening were demonstrated to result in a noticeable growth rate increase with increasing film thickness. Highest surface roughness values were determined for the films deposited at 350-450 degrees C on all substrates used. The density of the film material increased with the concentration of crystalline phase but, within experimental uncertainty, was independent of orientation and sizes of crystallites in polycrystalline films. Refractive index increased with the material density. In addition, the refractive index values that were calculated from the transmission spectra depended on the surface roughness and crystallite sizes because the light scattering, which directly influenced the extinction coefficient, caused also a decrease of the refractive index determined in this way. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available