Journal
APPLIED SURFACE SCIENCE
Volume 256, Issue 13, Pages 4365-4369Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2010.02.032
Keywords
CuInS2; Gold substrate; Electrochemical atomic layer deposition; Underpotential deposition
Categories
Funding
- National Natural Science Foundation of China [20775030]
Ask authors/readers for more resources
In this paper the formation and characterization of the I-III-VI2 semiconductor compound CuInS2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetry (CV) technique and Amperometric I-t method is used to prepare the semiconductor compound. These thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and Fourier transform infrared spectroscopy (FT-IR). XRD results indicate that the CIS thin films have a (1 1 2) preferred orientation. The XPS analyses of the films reveal that Cu, In and S are present in an atomic ratio of approximately 1:1:2. And their semiconductor band gaps are found to be 1.50 eV by FT-IR. (C) 2010 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available