Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 1, Pages 25-32Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2010.06.019
Keywords
Na migration; ToF-SIMS; Depth profiling; Na implantation; O-2(+) sputtering; Projected range
Categories
Funding
- Federal Ministry of Economics and Labor of the Republic of Austria [98.362/0112-C1/10/2005]
- Carinthian Economic Promotion Fund (KWF) [18911 \ 13628 \ 19100]
Ask authors/readers for more resources
The detection of Na in insulating samples by means of time of flight-secondary ion mass spectrometry (ToF-SIMS) depth profiling has always been a challenge. In particular the use of O-2(+) as sputter species causes a severe artifact in the Na depth distribution due to Na migration under the influence of an internal electrical filed. In this paper we address the influence of the sample temperature on this artifact. It is shown that the transport of Na is a dynamic process in concordance with the proceeding sputter front. Low temperatures mitigated the migration process by reducing the Na mobility in the target. In the course of this work two sample types have been investigated: (i) A Na doped PMMA layer, deposited on a thin SiO2 film. Here, the incorporation behavior of Na into SiO2 during depth profiling is demonstrated. (ii) Na implanted into a thin SiO2 film. By this sample type the migration behavior could be examined when defects, originating from the implantation process, are present in the SiO2 target. In addition, we propose an approach for the evaluation of an implanted Na profile, which is unaffected by the migration process. (C) 2010 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available