Journal
APPLIED SURFACE SCIENCE
Volume 255, Issue 11, Pages 5876-5880Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2009.01.024
Keywords
Crystal quality; RF magnetron sputtering; Zinc oxide; Semiconducting II-VI materials
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Funding
- Hundred Talents Program Chinese Academy of Sciences
- 863'' project of China [2006AA03Z306]
- National Natural Science Foundation of China [50601025, 60876031]
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The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.
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