Lower voltage operation of a phase change memory device with a highly resistive TiON layer

The electrical switching behaviors of an offset-type phase change memory device with a highly resistive TiON layer were investigated, where the TiON layer (7nm thick) was formed at a 70nm wide contact between Ge1Sb2Te4 and TiN layers. Reversible transitions between crystalline (set) and amorphous (reset) phases were found to occur at relatively lower reset and set voltages, as compared with a device having no TiON layer. These results hold a high promise for a low-power operation of a phase change memory.