Journal
IEEE ELECTRON DEVICE LETTERS
Volume 25, Issue 8, Pages 538-540Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.832785
Keywords
analog/mixed-signal ICs; high-kappa; dielectric; high-kappa/SiO2 stack; metal-insulator-metal (MINI) capacitor; voltage coefficient of capacitance (VCC)
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It is demonstrated that the voltage coefficients of capacitance (VCC) in high-k, metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-k and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fF mum(2) and quadratic VCC of only 14 ppm/V-2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm degreesC) as well as low leakage current of less than 10 nA/cm(2) up to 4 V at 125 degreesC.
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