Journal
APPLIED SURFACE SCIENCE
Volume 254, Issue 18, Pages 5736-5740Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2008.03.039
Keywords
zinc oxide nanomaterials; Schottky barrier diode; gas sensor
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Novel ultra-long ZnO nanorods, with lengths about 0.5-1.5 mm and diameters ranging from 100 to 1000 nm, in mass production have been synthesized via the vapor-phase transport method with CuO catalyst at 900 degrees C. Rectifying Schottky barrier diodes have been fabricated by aligning a single ultra-long ZnO nanorod across paired Ag electrodes. The resulting current-voltage (I-V) characteristics of the SBD exhibit a clear rectifying behavior. The ideality factor of the diode is about 4.6, and the threshold voltage is about 0.54 V at room temperature (300 K). At the same time the detailed I-V characteristics have been investigated in the temperature range 423-523 K. In addition, after exposure of the Schottky diodes to NH3, the forward and reverse currents increase rapidly, indicating a high sensitivity to NH3 gas. (c) 2008 Elsevier B.V. All rights reserved.
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