Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 87, Issue 8, Pages 1525-1529Publisher
WILEY-BLACKWELL
DOI: 10.1111/j.1551-2916.2004.01525.x
Keywords
-
Categories
Ask authors/readers for more resources
The effect of the amount of boron doping in the range of 0 to 1.0 wt% on the high-temperature deformation of fine-grained beta-silicon carbide (SiC) was investigated by compression testing. Flow stress at the same grain size increased as the amount of boron doping decreased. The stress exponent increased from 1.3 to 3.4 as the amount of boron doping decreased. The strain rates of undoped SiC were similar to2 orders of magnitude lower than those of 1.0-wt%-boron-doped SiC of the same grain size. The apparent activation energies of SiC doped with 1.0 wt% boron and of undoped SiC were 771 +/- 12 and 884 +/- 80 kJ/mol, respectively. These results suggest that the actual contribution of grain-boundary diffusion to the accommodation process of grain-boundary sliding decreased as the amount of boron doping decreased. Consequently, the apparent contribution of the dislocation glide increased.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available