Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 33, Issue 8, Pages 886-892Publisher
SPRINGER
DOI: 10.1007/s11664-004-0216-5
Keywords
GOI; wafer bonding; Ge substrate
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Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are examined through transmission electron microscopy (TEM) from the initial hydrogen implant through the final Ge film polish. The completed GOI substrate is characterized for film uniformity, surface quality, contamination, stress, defectivity, and thermal robustness using a variety of techniques and found to be acceptable for initial device processing.
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