Journal
IEEE SENSORS JOURNAL
Volume 4, Issue 4, Pages 464-470Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2004.830301
Keywords
capacitive sensor; high-temperature sensor; pressure silicon carbide (SiC)
Ask authors/readers for more resources
Single-crystal 3C-silicon carbide (SiC) capacitive pressure sensors are proposed for high-temperature sensing applications. The prototype device consists of an edge-clamped circular 3C-SiC diaphragm with a radius of 400 mum and a thickness of 0.5 mum suspended over a 2-mum sealed cavity on a silicon substrate. The 3C-SiC film is grown epitaxially on a 100-mm diameter <100> silicon substrate by atmospheric pressure chemical vapor deposition. The fabricated sensor demonstrates a high-temperature sensing capability up to 400 degreesC, limited by the, test setup. At 400 degreesC, the device achieves a linear characteristic response between 1100 and 1760 torr with a sensitivity. of 7.7 fF/torr, a linearity of 2.1%, and a hysterisis of 3.7% with a sensing repeatability of 39 torr (52 mbar). A wide range of sensor specifications, such as linear ranges, sensitivities, and capacitance values, can be achieved by choosing the proper device geometrical parameters.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available