Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 5, Pages 745-747Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1776614
Keywords
-
Categories
Ask authors/readers for more resources
Simulations from a family of atomistic structural models for unhydrogenated amorphous silicon suggest that fluctuation electron microscopy experiments have observed orientational order of paracrystalline grains in amorphous silicon. This order may consist of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. This observation makes a natural connection to the known growth modes of microcrystalline silicon and may be useful for other materials systems. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available