Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering

Thin films of the M(n+1)AX(n)-phases Ti2AlC and Ti3AlC2 have been deposited by dc magnetron sputtering. In agreement with the Ti-Si-C system, the MAX-phase nucleation is strongly temperature dependent. At 900 degreesC epitaxial films of Ti2AlC and Ti3AlC2 were grown, but at 700 degreesC only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti3AlC was grown at 800 degreesC. A bulk resistivity of 0.51 muOmega m, 0.44 muOmega m, and 1.4 muOmega m was measured for the Ti3AlC2, Ti2AlC, and Ti3AlC films deposited at 900 degreesC, respectively. By nanoindentation the hardness and Young's module was determined for an epitaxial Ti3AlC2 film to 20 GPa and 260 GPa, respectively. (C) 2004 American Institute of Physics.