Journal
JOURNAL OF PHYSICAL CHEMISTRY B
Volume 108, Issue 32, Pages 12024-12026Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp048420o
Keywords
-
Categories
Ask authors/readers for more resources
Large quantities of prism-shaped GaN nanorods were prepared by a thermal CVD reaction between Ga and NH3 on LaAlO3 crystal substrates. The distinct morphology of the GaN nanorods lies in their prism-like out shape and most of them have a quadrilateral cross section. The Raman spectrum of the GaN nanorods shows two additional bands at 255 and 419 cm(-1). Moreover, a large red shift of A(1)(LO) phonon has been observed compared with that of bulk GaN crystals. Room-temperature photoluminescence measurement reveals a broad emission ranging from 2.5 to 3.5 eV with some fine structures, which are believed to be associated with the defect levels.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available