Journal
PHYSICAL REVIEW LETTERS
Volume 93, Issue 7, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.93.076402
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The buildup of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation around the 2s-exciton resonance, it is shown that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population. As a consequence, inversion between the 2p and 1s exciton states can be obtained leading to the appearance of significant terahertz gain.
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