Journal
JOURNAL OF APPLIED PHYSICS
Volume 96, Issue 4, Pages 2080-2086Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1767292
Keywords
-
Categories
Ask authors/readers for more resources
We report on single crystal high mobility organic field-effect transistors prepared on prefabricated substrates using a flip-crystal approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the field-effect transistors' electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm(2)/V s have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the intrinsic transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available