Journal
ELECTRONICS LETTERS
Volume 40, Issue 17, Pages 1082-1083Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20045206
Keywords
-
Categories
Ask authors/readers for more resources
A novel quantum dot infrared photodetector design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is home out of experimental results.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available