Deposition of bismuth chalcogenide thin films using novel single-source precursors by metal-organic chemical vapor deposition

The metal-organic compounds, Bi[(EPR2)(2)N](3) (E = S, Se; R = Ph, Pr-i), have been synthesized and used as single-source precursors for the deposition of bismuth chalcogenide thin films via low-pressure and aerosol-assisted metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi2Se3 (using Bi[((SePPr2)-Pr-i)(2)N](3)), hexagonal BiSe (using Bi[(SePPh2)(2)N](3)), and orthorhombic Bi2S3 (using Bi[(SPR2)(2)N](3)) have been deposited on glass substrates. Films have been characterized by X-ray powder diffraction, scanning electron microscopy, and energy-dispersive analysis of X-rays.