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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 43, Issue 9A, Pages 6001-6007Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.6001
Keywords
copper metallization; conductive passivation layer; cobalt silicide; selective silicidation; silane; disilane
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Aiming to realize a conductive passivation layer for copper interconnection, the solid-gas reactions of cobalt films with silane and with disilane to form cobalt silicides are experimentally investigated. X-ray photoelectron spectroscopy revealed that cobalt silicides layers of up to 6 nm thickness can be selectively formed in the reaction at 473-673 K within 5 min without detectable silicon deposition on silicon dioxide, a common inter-metal dielectric layer. Rapid thermal oxidation experiments revealed that the silicided cobalt layers had better anti-oxidation performance than untreated cobalt layers, and the effect of silicidation was to suppress copper out-diffusion through the cobalt layers. Because cobalt-based alloys can be selectively electroless-plated on copper, selective silicidation of cobalt layers will be easily incorporated into device processing.
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