Electrical bistability of polyfluorene devices

A specific layer transfer process is developed so as to obtain multi-layer devices based on spin-coated polymers. This process is put to good use for embedding fine evaporated Ag layers between polyfluorene (PF) films with cyano side groups. The resulting structures, which are a stack with sequence Ag/PF/Ag/PF/Ag, exhibit reproducible electrical bistability. The difference between the off and on currents may extend up to eight orders of magnitude. Hence this effect might be used for producing memory devices. (C) 2004 Elsevier B.V. All rights reserved.