Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5038105
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Funding
- AFOSR [FA9550-17-1-0048]
- NSF [DMREF 1534303, ECCS-1542081]
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A high current density of 1 kA/cm(2) is experimentally realized in enhancement-mode Ga2O3 vertical power metal-insulator field-effect transistors with fin-shaped channels. Comparative analysis shows that the more than doubled current density over the prior art arises from a larger transistor channel width; on the other hand, a wider channel also leads to a more severe drain-induced barrier lowering therefore premature transistor breakdown at zero gate-source bias. The observation of a higher current density in a wider channel confirms that charge trapping in the gate dielectric limits the effective field-effect mobility in these transistor channels, which is about 2 x smaller than the electron mobility in the Ga2O3 drift layer. The tradeoff between output-current density and breakdown voltage also depends on the trap density. With minimal trap states, the output current density should remain high while breakdown voltage increases with decreasing fin-channel width. Published by AIP Publishing.
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