Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.5041879
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Funding
- ARPA-E SWITCHES Program [DE-AR0000454]
- AFOSR [FA9550-17-1-0048]
- NSF NNCI Program [ECCS-1542081]
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Thermal activation of buried p-type GaN is investigated in metal-organic chemical vapor deposition-regrown vertical structures, where the buried p-GaN is re-passivated by hydrogen during regrowth. The activation is performed by exposing the buried p-GaN through etched sidewalls and characterized by reverse breakdown measurements on vertical diodes. The effect of the n-type doping level on the activation has been observed. After 725 degrees C/30 min annealing in a dry air environment, the buried p-GaN with a regrown unintentionally-doped (UID) capping layer is sufficiently activated due to significant Mg-incorporation in the UID layer, allowing for hydrogen up-diffusion. With an additional regrown n(+)-GaN capping layer (i. e., in n(+)/i/p-n diodes), only lateral diffusion of H out of the exposed mesa sidewall is permitted. A critical lateral dimension between 10 and 20 lm is found for the n(+)/i/p-n diodes, under which the buried p-GaN is sufficiently activated. The diodes with activated buried p-GaN achieved up to 1200V breakdown voltage, indicating that over 28% of the Mg dopants is activated. The study demonstrates the effectiveness of sidewall p-GaN activation in achieving high breakdown voltage pertinent to GaN vertical power devices, while providing guidelines on the required device geometry. Published by AIP Publishing.
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