Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5045843
Keywords
-
Categories
Funding
- EPSRC [EP/M011682/ 1]
- JSPS KAKENHI [15H05700]
- KAKENHI [17K14655]
- JSPS Summer Program
- Takuetsu program of the Ministry of Education, Culture, Sports, Science and Technology, Japan
- EPSRC [EP/R04502X/1, EP/M010589/1, EP/M011682/1] Funding Source: UKRI
Ask authors/readers for more resources
In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g((2))(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g((2))(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 +/- 0.003 without any form of background correction. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available