4.6 Article

Electric field effect in ultrathin black phosphorus

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4868132

Keywords

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Funding

  1. Singapore National Research Foundation [NRF-RF2008-07, NRF-CRP9-2011-03]
  2. SMF-NUS Research Horizons Award-Phase II
  3. NUS Young Investigator Award
  4. NRF-CRP Award Novel 2D materials with tailored properties: beyond graphene [NRF-CRP6-2010-05]

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Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO2 and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm(2)/Vs and drain current modulation of over 10(3). At low temperatures, the on-off ratio exceeds 10(5), and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation. (C) 2014 AIP Publishing LLC.

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