Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4893605
Keywords
-
Categories
Funding
- Deutsche Forschungsgemeinschaft (DFG) [AL560/13-1, SCHR1123/7-1]
- Federal Ministry of Education and Research (BMBF) [05KS7UM1, 05K10UMA, 05KS7WW3, 16ES0250, 05K10WW1]
- ENIAC JU within the project PANACHE
- AvH foundation
Ask authors/readers for more resources
The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available