Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4898597
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Funding
- NSF [EPS-1003970]
- Arkansas Bioscience Institute
- Arktonics, LLC (Air Force SBIR) [FA9550-14-C-0044]
- DARPA [W911NF-13-1-0196]
- AFOSR [FA9550-14-1-0196]
- AOARD [AOARD-14-4073]
- NSF REU Program [EEC-1359306]
- Office Of The Director
- EPSCoR [1003970] Funding Source: National Science Foundation
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Material and optical characterizations have been conducted for epitaxially grown Ge1-xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample. (C) 2014 AIP Publishing LLC.
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