Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4903190
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Funding
- Japan Society for the Promotion of Science (JSPS)
- Ministry of Education, Culture, Sports and Technology (MEXT)
- Grants-in-Aid for Scientific Research [14J09475, 26248061, 25107003] Funding Source: KAKEN
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This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 and 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV. (C) 2014 AIP Publishing LLC.
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