Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863430
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Funding
- National Key Basic Research Program of China [2011CBA00607, 2013CBA01902, 2010CB934300]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61076121, 11104109, 11374119]
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Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal stability. The sharp decrease in mobility is responsible for the increasing amorphous and crystalline sheet resistance. The uniform crystalline structure of TST film is very benefit for the endurance characteristic. The Set and Reset operation voltages for TST-based phase change memory device are much lower than those of conventional Ge2Sb2Te5-based one. Remarkably, the device presents extremely rapid Set operation speed (similar to 6 ns). Furthermore, up to 1 x 10(6) programming cycles are obtained with stable Set and Reset resistances. (C) 2014 AIP Publishing LLC.
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