Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863407
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Funding
- European Commission [318144, 322369]
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We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 x 10(11) A/m(2) in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell. (C) 2014 AIP Publishing LLC.
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