Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4869103
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Funding
- European Community [611143]
- French Agence Nationale de la Recherche through the ADVICE [ANR-2011-BS04-021-03]
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We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a similar to 97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications. (C) 2014 AIP Publishing LLC.
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