Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4866008
Keywords
-
Categories
Funding
- Converging Research Center Program [2013K000158]
- Global Research Laboratory Program through the Ministry of Science, ICT, and Future Planning, South Korea [2012040157]
- National Research Foundation of Korea [2010-50170, 2012K1A1A2040157] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
To elucidate the origin of the formation of the ferroelectric phase in Hf0.5Zr0.5O2 films, the effects of film strain and crystallographic orientation on the properties were examined. Using a (111)-textured Pt bottom electrode, Hf0.5Zr0.5O2 films with a (111)-preferred texture inappropriate for transforming their phase from non-ferroelectric tetragonal to ferroelectric orthorhombic phase were deposited. In contrast, randomly oriented Hf0.5Zr0.5O2 films, grown on the TiN electrode, showed feasible ferroelectric properties due to their transformation to the ferroelectric orthorhombic phase. The origin of such transformation is the large in-plane tensile strain for the elongation of the c-axis of the tetragonal phase. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
