Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4899051
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Funding
- National Science Foundation [ECCS-1201384, ECCS-1252623]
- Defense Threat Reduction Agency [HDTRA1-14-1-0030]
- NSF [CBET-1437656]
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1437656] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1201384, 1252623] Funding Source: National Science Foundation
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We report the observation of self-doping in perovskite. CH3NH3PbI3 was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI2) which are the two precursors for perovskite formation. MAI-rich and PbI2-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed. (C) 2014 AIP Publishing LLC.
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