Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4884077
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Funding
- NSF [ECCS 1128644]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1128644] Funding Source: National Science Foundation
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We demonstrate that catalyst-assisted hydrogen spillover doping of VO2 thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO2 lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO2(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO2(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO2 resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Our results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO2 thin films. (C) 2014 AIP Publishing LLC.
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