Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4868880
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Funding
- Office of Science, Office of Basic Energy Sciences, and Division of Materials Sciences and Engineering of the U.S. Department of Energy [De-Ac02-05Ch11231]
- Electronic Materials (E-Mat) program
- Bay Area Photovoltaics Consortium (BAPVC)
- Swiss Federal Energy Office
- Zeno Karl Schindler Foundation
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We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm(2) in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. (C) 2014 AIP Publishing LLC.
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