Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4864082
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Funding
- Italian Ministry of Education, University, and Research (MIUR) [RBFR10LULP, RBFR10M5BT]
- EU Graphene Flagship [604391]
- ERC
- EU
- Royal Society Wolfson Research Merit Award
- EPSRC [EP/K01711X/1, EP/K017144/1]
- Italian Ministry of Economic Development
- CNRS
- Region Languedoc-Roussillon Terahertz Platform
- EPSRC [EP/K01711X/1, EP/K017144/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K01711X/1, EP/K017144/1] Funding Source: researchfish
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We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity similar to 1.2 V/W (1.3 mA/W) and a noise equivalent power similar to 2 x 10(-9) W/root Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems. (C) 2014 AIP Publishing LLC.
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