Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4862028
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Funding
- National Science Foundation [DMR-0955752]
- Department of Energy [DE-EE0005325]
- U.S. Government
- National Aeronautics and Space Administration [SAA3-844]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0955752] Funding Source: National Science Foundation
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The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (V-OC). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated. While the V-OC of the emitter-shifted device was degraded, the center and base-shifted devices exhibited V-OC comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement. (C) 2014 AIP Publishing LLC.
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