Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4867235
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Funding
- Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Government [T23-612/12-R]
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In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing. (C) 2014 AIP Publishing LLC.
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