Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4901048
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Funding
- NSF NSEC (CANPD) Program [EEC0914790]
- NSF Grant [ECCS-0925529]
- NSF (CAREER) [DMR-0955471]
- Ohio State University Materials Research Seed Grant Program
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0955471] Funding Source: National Science Foundation
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The growth and electrical characterization of the heterojunction formed between two-dimensional (2D) layered p-molybdenum disulfide (MoS2) and nitrogen-doped 4H silicon carbide (SiC) are reported. The integration of 2D semiconductors with the conventional three-dimensional (3D) substrates could enable semiconductor heterostructures with unprecedented properties. In this work, direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be high quality based on x-ray diffraction and Raman spectra. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a diode for which forward conduction in the low-bias region is dominated by multi-step recombination tunneling. Capacitance-voltage measurements were used to determine the built-in voltage for the p-MoS2/n-SiC heterojunction diode, and we propose an energy band line up for the heterostructure based on these observations. The demonstration of heterogeneous material integration between MoS2 and SiC enables a promising new class of 2D/3D heterostructures. (C) 2014 AIP Publishing LLC.
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