Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4866965
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Funding
- NSF/MRSEC through the Cornell Center for Materials Research [DMR-1120296, DMR-1063059]
- ONR
- DARPA
- NSF [ECS-0335765]
- National Council for Scientific and Technological Development (CNPq), Brazil
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We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer. (C) 2014 AIP Publishing LLC.
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