Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 degrees C and dramatic reduction in the growth process temperature for InGaN-based light-emitting diodes (LEDs) were achieved. Mg-doped GaN layers grown on semi-insulating GaN at 480 degrees C exhibited clear p-type conductivity with a hole concentration and mobility of 3.0 x 10(17) cm(-3) and 3.1 cm(2) V-1 s(-1), respectively. GaN/In0.33Ga0.67N/GaN LEDs fabricated at 480 degrees C showed clear rectifying characteristics and a bright electroluminescence emission near 640 nm. These results indicate that this low temperature PSD growth technique is quite promising for the production of nitride-based light-emitting devices on large-area glass substrates. (C) 2014 AIP Publishing LLC.