Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4902233
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Funding
- Air Force Office of Scientific Research under AFOSR [FA9550-14-1-0067, 5010-UV-AFOSR-0067]
- National Science Foundation [CBET-1339436]
- Commonwealth Research Commercialization Fund (CRCF) of Virginia
- U.S. Department of Energy National Nuclear Security Administration [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [1339436] Funding Source: National Science Foundation
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Thermal boundary conductance is of critical importance to gallium nitride (GaN)-based device performance. While the GaN-substrate interface has been well studied, insufficient attention has been paid to the metal contacts in the device. In this work, we measure the thermal boundary conductance across interfaces of Au, Al, and Au-Ti contact layers and GaN. We show that in these basic systems, metal-GaN interfaces can impose a thermal resistance similar to that of GaN-substrate interfaces. We also show that these thermal resistances decrease with increasing operating temperature and can be greatly affected by inclusion of a thin adhesion layers. (C) 2014 AIP Publishing LLC.
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