Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4882417
Keywords
-
Categories
Funding
- NSF Grant [CMMI-1232883]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1232883] Funding Source: National Science Foundation
Ask authors/readers for more resources
We present a study on the photodiode response of vertically stacked graphene/MoS2/metal heterostructures in which MoS2 layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/MoS2/metal structures, the presented graphene/MoS2/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS2 heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available