Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4871865
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Funding
- Converging Research Center Program through the Ministry of Science, ICT and Future Planning, Korea [2013K000372]
- Kwangwoon University
- National Research Foundation of Korea [2010-50228] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High performance graphene field-effect transistors (FETs) with a solution-processed Al2O3 sensing membrane were fabricated. The solution-processed deposition technique offers a lot of advantages in terms of low cost, simplicity, high throughput, and large-area devices. Especially, the solution-deposition process is well-suited for membrane formation of graphene FETs, which is vulnerable to plasma or thermal processes for insulator growth on surface. The graphene FETs with a solution-deposited Al2O3 sensing membrane exhibited a higher pH sensitivity as well as good chemical stability. Therefore, the graphene FETs with solution-deposited Al2O3 sensing membrane are very promising to biological sensors application. (C) 2014 AIP Publishing LLC.
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