Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4898773
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Funding
- KAKENHI
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) Japan
- Japan Society of the Promotion of Science (JSPS) [24360128, 25420279, 26630141]
- Nanotechnology Platform Program (Hokkaido University) organized by MEXT
- Grants-in-Aid for Scientific Research [26630141, 25420279] Funding Source: KAKEN
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In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change. (C) 2014 AIP Publishing LLC.
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