Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4864653
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Funding
- Deutsche Forschungsgemeinschaft (DFG) [AL560/13-1, SCHR1123/7-1]
- Federal Ministry of Education and Research (BMBF) [05KS7UM1, 05K10UMA, 05KS7WW3, 05K10WW1]
- AvH foundation
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We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2-x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2-x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications. (C) 2014 AIP Publishing LLC.
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