Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4902056
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Funding
- NSF [ECCS 1128644]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1128644] Funding Source: National Science Foundation
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Vanadium dioxide (VO2), with its characteristic metal-insulator phase transition, is a prospective active candidate to realize tunable optical devices operating at terahertz (THz) frequencies. However, the abrupt phase transition restricts its practical use in analog-like continuous applications. Incorporation of tungsten is a feasible approach to alter the phase transition properties of thin VO2 films. We show that amplitude THz modulation depth of similar to 65%, characteristic phase transition temperature of similar to 40 degrees C, and tuning range larger than 35 degrees C can be achieved with W-doped VO2 films grown on sapphire substrates. W-doped VO2 films can also be used to suppress Fabry-Perot resonances at THz frequencies but at temperatures much lower than that observed for undoped VO2 films. The gradual phase transition temperature window allows for precise control of the W-doped VO2 optical properties for future analog based THz devices. (C) 2014 AIP Publishing LLC.
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