Related references
Note: Only part of the references are listed.Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
Satoshi Urakawa et al.
APPLIED PHYSICS LETTERS (2013)
Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
Shinya Aikawa et al.
APPLIED PHYSICS LETTERS (2013)
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
Shinya Aikawa et al.
APPLIED PHYSICS LETTERS (2013)
High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer
Shigekazu Tomai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements
Sungsik Lee et al.
APPLIED PHYSICS LETTERS (2012)
Role of Si as carrier suppressor in amorphous Zn-Sn-O
IlJoon Kang et al.
CURRENT APPLIED PHYSICS (2012)
Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress
Bosul Kim et al.
APPLIED PHYSICS LETTERS (2011)
Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor
Do Hyung Kim et al.
APPLIED PHYSICS LETTERS (2011)
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Kwang Hwan Ji et al.
APPLIED PHYSICS LETTERS (2011)
The Effects of Zn Ratio on the Microstructure Electrical Properties of InGaZnO Films
Haseok Jeon et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
Hyeon-Kyun Noh et al.
PHYSICAL REVIEW B (2011)
Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor
Jun-Young Huh et al.
THIN SOLID FILMS (2011)
Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress
Khashayar Ghaffarzadeh et al.
APPLIED PHYSICS LETTERS (2010)
Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 °C
Eugene Chong et al.
APPLIED PHYSICS LETTERS (2010)
Meyer-Neldel Rule and Extraction of Density of States in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending
Jaewook Jeong et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Material characteristics and applications of transparent amorphous oxide semiconductors
Toshio Kamiya et al.
NPG ASIA MATERIALS (2010)
Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
Charlene Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors
Ken Hoshino et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Application of the Meyer-Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4 Thin-Film Transistors
Kazushige Takechi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Study on Current Crowding in the Output Characteristics of Amorphous InGaZnO4 Thin-Film Transistors Using Dual-Gate Structures with Various Active-Layer Thicknesses
Kazushige Takechi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor
Hideya Kumomi et al.
Journal of Display Technology (2009)
A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators
R. B. M. Cross et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
Hai Q. Chiang et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2008)
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
Tatsuya Iwasaki et al.
APPLIED PHYSICS LETTERS (2007)
Investigating the stability of zinc oxide thin film transistors
R. B. M. Cross et al.
APPLIED PHYSICS LETTERS (2006)
A comprehensive review of ZnO materials and devices -: art. no. 041301
U Ozgür et al.
JOURNAL OF APPLIED PHYSICS (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film
YS Jung et al.
THIN SOLID FILMS (2003)
Share Paper
