4.6 Article

Resistance switching in epitaxial SrCoOx thin films

Journal

APPLIED PHYSICS LETTERS
Volume 105, Issue 6, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4893323

Keywords

-

Funding

  1. National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2012R1A1A2008595, 2012R1A1A2008845, 2013R1 A2A2A01067415]
  2. NRF [2013R1A3A2042120, 2014-023563, 2008-0061906, 2012040157]
  3. Samsung Research Fund, Sungkyunkwan University
  4. Korea Institute of Science and Technology (KIST) [2E24881, 2V03330]
  5. National Research Foundation of Korea [2012R1A1A2008595] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO3 (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO2.5) and conducting perovskite (SrCoO3-delta) depending on the oxygen content. The current-voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-tometal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoOx thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO2.5. (c) 2014 AIP Publishing LLC.

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