Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863736
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Funding
- Australian Government through the Australian Renewable Energy Agency (ARENA)
- Australian Research Council (ARC)
- Guodian New Energy Technology Research Institute
- China Guodian Corporation
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In this work, TiB2 thin films have been employed as intermediate layer between absorber and back contact in Cu2ZnSnS4 (CZTS) thin film solar cells for interface optimization. It is found that the TiB2 intermediate layer can significantly inhibit the formation of MoS2 layer at absorber/back contact interface region, greatly reduces the series resistance and thereby increases the device efficiency by short current density (Jsc) and fill factor boost. However, introducing TiB2 degrades the crystal quality of absorber, which is detrimental to device performance especially Voc. The careful control of the thickness of TiB2 intermediate layer is required to ensure both MoS2 with minimal thickness and CZTS absorber with large grain microstructure according to the absorber growth process. (C) 2014 AIP Publishing LLC.
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