Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films

The energy storage properties of antiferroelectric (AFE) Pb0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U-re) and charge-discharge efficiency (eta) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 degrees C), while U-re increases linearly and eta decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high U-re (approximate to 61 J/cm(3)) and low leakage current density (approximate to 3.5 x 10(-8) and 3.5 x 10(-5) A/cm(2) at 25 and 225 degrees C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage. (C) 2014 AIP Publishing LLC.