Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4871515
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Funding
- Advanced Low Carbon Technology Research and Development Program (ALCA) of the Japan Science and Technology Agency (JST)
- Grants-in-Aid for Scientific Research [24760262, 14J04700] Funding Source: KAKEN
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We investigate the magnetic, electric, and magnetoelectric properties of a Cr2O3 thin film system that was deposited by radiofrequency magnetron sputtering. The temperature dependence of the magnetic susceptibility of our Cr2O3 film is similar to that of bulk Cr2O3, which indicates a small oxygen non-stoichiometry in the film. The Cr2O3 film exhibits high AC resistivity (similar to 10(9) Omega cm) and low leakage current (4.0 x 10(-5) A/cm(2) at E = 80 kV/cm). Finally, we demonstrate magnetoelectric switching of the exchange bias using the Cr2O3/Pt/Co all-thin-film system. By changing the direction of the electric field during the magnetoelectric field cooling process, the exchange bias field was changed symmetrically from -160Oe to +160Oe, which represents the switching of the antiferromagnetic domain of Cr2O3. (C) 2014 AIP Publishing LLC.
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